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| FDMS7650 N-Channel PowerTrench(R) MOSFET August 2009 FDMS7650 N-Channel PowerTrench(R) MOSFET 30 V, 60 A, 0.99 m Features Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). Applications OringFET Synchronous rectifier D D D D D D 5 6 7 8 4 3 2 1 G S S S G S S D S Bottom Pin 1 D Top Power 56 MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 60 232 36 450 544 104 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W Package Marking and Ordering Information Device Marking FDMS7650 Device FDMS7650 Package Power 56 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 1 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 15 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 36 A VGS = 4.5 V, ID = 32 A VGS = 10 V, ID = 36 A, TJ = 125 C VDS = 5 V, ID = 36 A 1 1.9 -6 0.8 1.1 1.1 267 0.99 1.55 1.7 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 11250 3050 240 1.4 14965 4055 360 3 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 36 A VDD = 15 V, ID = 36 A, VGS = 10 V, RGEN = 6 28 24 83 21 149 63 34 13 45 38 133 34 209 88 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 36 A (Note 2) (Note 2) 0.7 0.8 69 56 1.2 1.3 97 90 V ns nC IF = 36 A, di/dt = 100 A/s Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 2 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 7 6 5 4 VGS = 3.5 V VGS = 3 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 160 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V VGS = 4 V 120 80 3 2 1 VGS = 4.5 V VGS = 10 V VGS = 4 V VGS = 3.5 V 40 0 0 VGS = 3 V 0 0 40 80 120 160 200 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 SOURCE ON-RESISTANCE (m) ID = 36 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.4 rDS(on), DRAIN TO 8 ID = 36A 6 4 TJ = 125 oC 1.2 1.0 2 TJ = 25 oC 0.8 -75 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 200 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 200 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 VGS = 0 V 160 ID, DRAIN CURRENT (A) VDS = 3 V TJ = 150 oC 120 TJ = 150 oC 10 80 TJ = 25 oC TJ = 25 oC 1 TJ = -55 oC 40 TJ = -55 oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 3 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 36 A 20000 10000 CAPACITANCE (pF) 8 6 4 VDD = 20 V VDD = 10 V VDD = 15 V Ciss Coss 1000 2 f = 1 MHz VGS = 0 V Crss 0 0 40 80 Qg, GATE CHARGE (nC) 120 160 100 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 250 RJC = 1.2 C/W o 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 200 150 VGS = 4.5 V VGS = 10 V TJ = 25 oC 10 TJ = 125 oC 100 50 Limited by Package 1 -3 10 10 -2 10 -1 1 10 10 2 10 3 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1000 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 SINGLE PULSE RJA = 125 oC/W TA = 25 oC ID, DRAIN CURRENT (A) 100 10 1 0.1 THIS AREA IS LIMITED BY rDS(on) 100 1 ms 10 ms 100 ms DC SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC 10 0.01 0.01 0.1 1 10 100200 1 -3 10 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 4 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RJA = 125 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 -3 10 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 5 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 6 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPSTM AccuPowerTM PowerTrench(R) The Power Franchise(R) F-PFSTM Auto-SPMTM PowerXSTM (R) FRFET(R) Build it NowTM Programmable Active DroopTM SM (R) CorePLUSTM Global Power Resource QFET TinyBoostTM CorePOWERTM Green FPSTM QSTM TinyBuckTM Green FPSTM e-SeriesTM CROSSVOLTTM Quiet SeriesTM TinyCalcTM GmaxTM CTLTM RapidConfigureTM TinyLogic(R) GTOTM Current Transfer LogicTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TM TinyPowerTM ISOPLANARTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM MegaBuckTM EZSWITCHTM* SmartMaxTM TinyWireTM TM* MICROCOUPLERTM SMART STARTTM TriFault DetectTM MicroFETTM SPM(R) TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM Fairchild(R) SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 Motion-SPMTM UHC(R) (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R) FlashWriter * Power-SPMTM tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDMS7650 Rev.E 7 www.fairchildsemi.com |
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